System and method for determining maximum operational parameters used in maskless applications

ABSTRACT

A lithographic method and apparatus for determining operational parameters of a maskless lithography tool. In an embodiment, an amount of data in a datapath of the maskless lithography system is reduced. A maximum value of at least one operational parameter of the maskless lithography system is determined responsive to the reduced amount of data in the datapath.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.11/022,925, entitled “System and Method for Determining MaximumOperational Parameters Used in Maskless Applications,” to Hoeks, filedon Dec. 28, 2004, now allowed, the entirety of which is herebyincorporated by reference as if fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention is directed to a light patterning device and amethod of using the same.

2. Background Art

A patterning device is used to pattern incoming light. A dynamicpatterning device can include an array of individually controllableelements that generate a pattern through receipt of analog or digitalsignals. The algorithm used to control the dynamic patterning device, sothat its individually controllable elements are in a proper state toform a desired pattern, is called a rasterization algorithm or opticalrasterization algorithm. Example environments for use of the patterningdevice can be, but are not limited to, a lithographic apparatus, aprojector, a projection display apparatus, or the like.

Generally speaking, rasterization algorithms begin with a renderingengine receiving image data (e.g., mask file) via a data path. The imagedata includes a representation of the image to be patterned by thepatterning device. The image data is converted into pattern data, whichincludes the proper state of the individually controllable elements ofthe dynamic patterning device. The pattern data is sent through the datapath to control the individually controllable elements of the dynamicpatterning device.

If the feature density of the image file exceeds the maximum renderingcapacity of the data path, the rasterization algorithm may be aborted.There are at least two possible solutions to prevent the rasterizationalgorithm from being aborted. First, the storage capacity of therendering engine can be increased; however, it remains possible that fora particular image file the feature density could even exceed theincreased storage capacity. Second, the scan speed of the patterningdevice can be adjusted in real-time in accordance with the featuredensity of the image file; however, this is difficult and could giverise to irregularities in the patterned beam.

Therefore, what is needed is a system and method for rendering an imagefile that does not exceed the capacity of the data path. To avoidirregularities, the system and method should not include real-timeadjustments during the rendering process.

BRIEF SUMMARY OF THE INVENTION

According to an aspect of the present invention, there is provided alithography system including, an illumination source, a patterngenerator, a projection system, and a control module. The illuminationsource supplies a beam of radiation. The pattern generator patterns thebeam of radiation. The projection system projects the patterned beamonto a target portion of a substrate supported by a stage during anexposure operation. The control module couples to at least one of theillumination source, the pattern generator, and the stage. The controlmodule determines a respective maximum operational parameter for atleast one of the illumination source, the pattern generator, and thestage.

According to another aspect of the present invention, there is provideda method for using a lithography system, including the following steps.A maximum value for at least one operational parameter of the masklesslithography system is determined before an exposure operation. Themaximum values of the at least one operational parameter are used to setthe respective at least one operational parameter of the masklesslithography system. A beam of radiation is patterned using a patterngenerator of the maskless lithography system. The patterned beam ofradiation is projected onto a target portion of a substrate supported bya stage during the exposure operation.

Further embodiments, features, and advantages of the present invention,as well as the structure and operation of the various embodiments of thepresent invention, are described in detail below with reference to theaccompanying drawings.

It is to be appreciated that the foregoing Summary represents one ormore exemplary embodiments and/or examples, but not all embodimentsand/or examples of the present invention, and thus should not be seen tobe limiting the present invention, or the appended claims, in any way.

BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES

The accompanying drawings, that are incorporated herein and form a partof the specification, illustrate the present invention and, togetherwith the description, further serve to explain the principles of theinvention and to enable a person skilled in the pertinent art to makeand use the invention.

FIG. 1 depicts an exemplary lithographic apparatus, in accordance withan embodiment of the present invention.

FIG. 2 depicts an exemplary control module, in accordance with anembodiment of the present invention.

FIG. 3 depicts an exemplary control module, in accordance with analternative embodiment of the present invention.

FIG. 4 illustrates a flowchart of a method for using a lithographysystem, in accordance with an embodiment of the present invention.

The present invention will now be described with reference to theaccompanying drawings. In the drawings, like reference numbers mayindicate identical or functionally similar elements.

DETAILED DESCRIPTION OF THE INVENTION

I. Overview

Although specific reference can be made in this text to the use oflithographic apparatus in the manufacture of integrated circuits (ICs),it should be understood that the lithographic apparatus described hereincan have other applications, such as the manufacture of integratedoptical systems, guidance and detection patterns for magnetic domainmemories, flat panel displays, thin-film magnetic heads, micro and macrofluidic devices, etc.

A system and method of the present invention are used to pattern lightusing an illumination source, a pattern generator, a projection system,and a control module. The illumination source supplies a beam ofradiation. The pattern generator forms a pattern to pattern the beam ofradiation. The projection system projects the patterned beam onto atarget portion of a substrate supported by a stage. The control moduledetermines the at least one maximum operational parameter for thesystem. In various examples, the substrate can be a display device, asemiconductor substrate or wafer, a flat panel display glass substrate,or the like.

In an example, image data is compressed to reduce the amount of memoryin a data path. Since the compression is performed before an exposureoperation, the control module can calculate a maximum frequency for theillumination source, a maximum scan speed for a pattern generator,and/or a maximum stage speed for the stage that supports the substratebefore an exposure operation is performed.

The Detailed Description is divided into five subsections. In subsectionII, terminology used in this document is disclosed. In subsection III,an exemplary lithographic apparatus is described. In subsection IV, anexemplary method for mask writing is described. Subsection V includes adiscussion of an example advantage. Lastly, in subsection VI, concludingremarks are discussed.

II. Terminology

The use of the terms “wafer” or “die” herein can be considered assynonymous with the more general terms “substrate” or “target portion”,respectively. The substrate referred to herein can be processed, beforeor after exposure, in, for example, a track (a tool that typicallyapplies a layer of resist to a substrate and develops the exposedresist) or a metrology or inspection tool. Where applicable, thedisclosure herein can be applied to such and other substrate processingtools. Further, the substrate can be processed more than once, forexample in order to create a multilayer IC, so that the term substrateused herein can also refer to a substrate that already contains multipleprocessed layers.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of 365, 248, 193, 157 or 126 mn) and extremeultraviolet (EUV) radiation (e.g., having a wavelength in the range of5-20 nm), as well as particle beams, such as ion beams or electronbeams.

The term “array of individually controllable elements” as here employedshould be broadly interpreted as referring to any device that can beused to endow an incoming radiation beam with a patterned cross-section,so that a desired pattern can be created in a target portion of thesubstrate. The terms “light valve” and “Spatial Light Modulator” (SLM)can also be used in this context. Examples of such patterning devicesare discussed below.

The term “projection system” used herein should be broadly interpretedas encompassing various types of projection systems, includingrefractive optical systems, reflective optical systems, and catadioptricoptical systems, as appropriate, for example, for the exposure radiationbeing used, or for other factors such as the use of an immersion fluidor the use of a vacuum. Any use of the term “lens” herein can beconsidered as synonymous with the more general term “projection system.”

III. An Exemplary Lithographic Apparatus

FIG. 1 schematically depicts a lithographic projection apparatus 100according to an embodiment of the present invention. Apparatus 100includes at least a radiation system 102, a pattern generator 104, aprojection system 108 (“lens”), and an object table 106 (e.g., asubstrate table). An overview of the operation of lithographic apparatus100 follows. Then alternative embodiments of lithographic apparatus 100are discussed. After the overview and alternative embodiments oflithographic apparatus 100, details and alternative embodiments of eachof the elements in apparatus 100 are described.

A. Overview and Alternative Embodiments

Radiation system 102 can be used for supplying a beam 110 of radiation(e.g., UV radiation). In this particular case, radiation system 102 alsocomprises a radiation source 112. Beam 110 subsequently intercepts thepattern generator 104 after being directed using beam splitter 118.Pattern generator 104 (e.g., a programmable mirror array) can be usedfor applying a pattern to beam 110. Having been reflected by patterngenerator 104, beam 110 passes through projection system 108, whichfocuses beam 110 onto a target portion 120 of the substrate 114.

In an alternative embodiment (not shown), lithographic apparatus 100 canbe of a type having two (e.g., dual stage) or more substrate tables(and/or two or more mask tables). In such “multiple stage” machines theadditional tables can be used in parallel, or preparatory steps can becarried out on one or more tables while one or more other tables arebeing used for exposure.

Lithographic apparatus 100 can also be of a type wherein the substrateis immersed in a liquid (not shown) having a relatively high refractiveindex (e.g., water), so as to fill a space between the final element ofthe projection system and the substrate. Immersion liquids can also beapplied to other spaces in the lithographic apparatus, for example,between the substrate and the first element of the projection system.Immersion techniques are well known in the art for increasing thenumerical aperture of projection systems.

Further, lithographic apparatus 100 can be provided with a fluidprocessing cell to allow interactions between a fluid and irradiatedparts of the substrate (e.g., to selectively attach chemicals to thesubstrate or to selectively modify the surface structure of thesubstrate).

Although lithography apparatus 100 according to an embodiment of thepresent invention is herein described as being for exposing a resist ona substrate, it will be appreciated that the invention is not limited tothis use and apparatus 100 can be used to project a patterned beam 110for use in resistless lithography.

B. Radiation System

Radiation system 102 can include a source 112, a conditioning device126, and an illumination source (illuminator) 124. In addition,illuminator 124 will generally include various other components, such asan integrator 130 and a condenser 132.

Source 112 (e.g., an excimer laser) can produce a beam of radiation 122.Beam 122 is fed into illumination source (illuminator) 124, eitherdirectly or after having traversed conditioning device 126, such as abeam expander, for example. Adjusting device 128 can be used for settingthe outer and/or inner radial extent (commonly referred to as σ-outerand σ-inner, respectively) of the intensity distribution in beam 122. Inthis way, beam 110 impinging on the pattern generator 104 has a desireduniformity and intensity distribution in its cross section.

It should be noted, with regard to FIG. 1, that source 112 can be withinthe housing of lithographic projection apparatus 100 (as is often thecase when source 112 is a mercury lamp, for example). In alternativeembodiments, source 112 can also be remote from lithographic projectionapparatus 100. In this case, radiation beam 122 would be directed intoapparatus 100 (e.g., with the aid of suitable directing mirrors). Thislatter scenario is often the case when source 112 is an excimer laser.It is to be appreciated that both of these scenarios are contemplatedwithin the scope of the present invention.

The illumination source can also encompass various types of opticalcomponents, including refractive, reflective, and catadioptric opticalcomponents for directing, shaping, or controlling the beam of radiation,and such components can also be referred to below, collectively orsingularly, as a “lens.”

C. Pattern Generator

Pattern generator 104 includes SLMs that can be regarded as replacing aconventional reticle. In addition to the SLM, pattern generator 104 maycomprise driving electronics for the SLM pixels and a data path. Inputimage data is transformed into a suitable format and fed to the SLM bycontrol module 150 (described in more detail below), via the data path.The drive electronics addresses each SLM pixel in sequence as the SLMpattern is updated, i.e., each new SLM image frame can be loaded bynormal matrix addressing. The frame rate, i.e., the time required toload each new frame onto the SLM, is a determining factor on apparatusthroughput.

Current technology may not allow construction of a single SLM that canprovide the massive array of pixels necessary to give the throughputrequired in many applications. Thus, typically a multiple SLM array(MSA) is used in parallel to provide the number of pixels needed. Forexample, the pixels from different SLMs of the MSA are “stitched”together to form a cohesive image on the substrate. This can be doneusing motion control and gray scaling techniques. In the followingdescription, for most instances, a reference to an SLM can also beinterpreted as including an MSA.

In general, the position of pattern generator 104 can be fixed relativeto projection; system 108. However, in an alternative arrangement,pattern generator 104 can be connected to a positioning device (notshown) for accurately positioning it with respect to projection system108. As depicted in FIG. 1, pattern generator 104 is of a reflectivetype, e.g., a programmable mirror array.

It will be appreciated that, as an alternative, a filter can filter outthe diffracted light, leaving the undiffracted light to reach thesubstrate. An array of diffractive optical micro electrical mechanicalsystem (MEMS) devices can also be used in a corresponding manner. Eachdiffractive optical MEMS device can include a plurality of reflectiveribbons that can be deformed relative to one another to form a gratingthat reflects incident light as diffracted light.

A further alternative embodiment can include a programmable mirror arrayemploying a matrix arrangement of tiny mirrors, each of which can beindividually tilted about an axis by applying a suitable localizedelectric field, or by employing piezoelectric actuation means. Onceagain, the mirrors are matrix-addressable, such that addressed mirrorswill reflect an incoming radiation beam in a different direction tounaddressed mirrors; in this manner, the reflected beam is patternedaccording to the addressing pattern of the matrix-addressable mirrors.The required matrix addressing can be performed using suitableelectronic means.

In the situations described here above, the array of individuallycontrollable elements can comprise one or more programmable mirrorarrays. More information on mirror arrays as here referred to can begleaned, for example, from U.S. Pat. Nos. 5,296,891 and 5,523,193, andPCT patent applications WO 98/38597 and WO 98/33096, which areincorporated herein by reference in their entireties.

A programmable LCD array can also be used. An example of such aconstruction is given in U.S. Pat. No. 5,229,872, which is incorporatedherein by reference in its entirety.

Examples of other types of pattern generators can include, but are notlimited to, tilting reflective devices, pistoning reflective devices,graytoning transmissive devices and graytoning reflective devices.

D. Control Module

Control module 150 comprises the data path, and will typically include astoring device for storing a “mask file” and a rasterizer. The storingdevice contains the entire image to be printed on the substrate. Therasterizer converts appropriate portions of the image for loading on tothe SLM into a bit map of SLM pixel values representing the patternrequired to transfer the desired image to the substrate. Control module150 will typically also comprise one or more frame buffers and otherconventional components necessary for matrix addressing of the SLM eachtime a new SLM frame is loaded. Appropriate image digitization and SLMdrive electronics will become apparent to one of ordinary skill in theart. For instance, control module 150 can be very similar to a bit mapbased mask-writer, but with appropriate matrix addressing drivecircuitry for addressing individual SLM pixels of the particular type ofSLM used.

As mentioned above, control module 150 supplies data to patterngenerator 104 that controls the actuation state (e.g., voltage or tiltangle) of the individual SLMs of pattern generator 104. The ability todeliver data at a sufficiently high rate is therefore an importantconsideration in attaining desired substrate scan speeds (describedbelow), and thus production rates. For instance, in the case of flatpanel display (FPD) production the apparatus typically operates in pulsescan mode with lasers pulsing at 50 KHz with 10/20 nsec pulse duration.The high frequency is used to provide acceptable throughput because ofthe large substrate areas that must be scanned to produce FPDs. To loadan SLM frame between pulses at this frequency can require data transferrates of the order of about 10 to 100 Gpixels/sec or more. Verycomplicated and expensive data handling and driver systems are requiredto handle such high data transfer rates. In addition, with such highdata transfer rates the chance of data errors occurring isproportionately non-negligible.

Unless otherwise specified, through the rest of this description, theterm “data transfer requirement” is to be understood to mean the amountof data that must be transferred to the SLM for updating the imageframe.

FIG. 2 depicts an exemplary embodiment of control module 150, inaccordance with an embodiment of the present invention. In thisembodiment, control module 150 includes a converter 210 and a compressor220. Converter 210 receives an image data set (e.g., a GDSII file) andconverts it into a pattern data set. As indicated in FIG. 2, compressor220 receives the pattern data set from converter 210. Compressor 220compresses the pattern data set and calculates maximum operationalparameters (e.g. scan speed of pattern generator 104, frequency ofillumination source 102, or stage speed of stage 106) based on thecompression. At least one of the operational parameters of lithographyapparatus 100 is set according to the calculation of compressor 220.

FIG. 3 depicts another exemplary embodiment of control module 150, inaccordance with an alternative embodiment of the present invention. Inthis alternative embodiment, control module 150 includes an analyzer310. Analyzer 310 receives and analyzes an input image data set todetermine the maximum operational parameters of lithographic apparatus100 before an exposure operation occurs (i.e., before beam 110 ispatterned by pattern generator 104 and projected at target 114). In asimilar manner to the example of FIG. 2, at least one of the operationalparameters of lithography apparatus 100 is set according to the analysisof analyzer 310.

E. Projection System

Projection system 108 (e.g., a quartz and/or CaF2 lens system or acatadioptric system comprising lens elements made from such materials,or a mirror system) can be used for projecting the patterned beamreceived from a beam splitter 118 onto a target portion 120 (e.g., oneor more dies) of substrate 114. Projection system 108 can project animage of the pattern generator 104 onto substrate 114. Alternatively,projection system 108 can project images of secondary sources so thatthe elements of the pattern generator 104 act as shutters. Projectionsystem 108 can also comprise a micro lens array (MLA) to form thesecondary sources and to project microspots onto substrate 114.

F. Object Table

Object table 106 can be provided with a substrate holder (notspecifically shown) for holding a substrate 114 (e.g., a resist coatedsilicon wafer, a projection system display or a projection televisiondisplay device). In addition, object table 106 can be connected to apositioning device 116 for accurately positioning substrate 114 withrespect to projection system 108.

With the aid of positioning device 116 (and optionally interferometricmeasuring device 134 on a base plate 136 that receives interferometricbeams 138 via beam splitter 140), object table 106 can be movedaccurately, so as to position different target portions 120 in the pathof beam 110. Where used, the positioning device for the patterngenerator 104 can be used to accurately correct the position of thepattern generator 104 with respect to the path of beam 110, e.g., duringa scan. In general, movement of object table 106 is realized with theaid of a long-stroke module (course positioning) and a short-strokemodule (fine positioning), that are not explicitly depicted in FIG. 1. Asimilar system can also be used to position pattern generator 104. Itwill be appreciated that beam 110 can alternatively/additionally bemoveable, while object table 106 and/or the pattern generator 104 canhave a fixed position to provide the required relative movement.

In an alternative configuration, object table 106 can be fixed, withsubstrate 114 being moveable over object table 106. Where this is done,object table 106 is provided with a multitude of openings on a flatuppermost surface, gas being fed through the openings to provide a gascushion that is capable of supporting substrate 114. This isconventionally referred to as an air bearing arrangement. Substrate 114is moved over object table 106 using one or more actuators (not shown),that are capable of accurately positioning substrate 114 with respect tothe path of beam 110. Alternatively, substrate 114 can be moved overobject table 106 by selectively starting and stopping the passage of gasthrough the openings.

It should be appreciated that where pre-biasing of features, opticalproximity correction features, phase variation techniques and multipleexposure techniques are used, for example, the pattern “displayed” onpattern generator 104 can differ substantially from the patterneventually transferred to a layer of or on the substrate. Similarly, thepattern eventually generated on the substrate can not correspond to thepattern formed at any one instant on pattern generator 104. This can bethe case in an arrangement in which the eventual pattern formed on eachpart of the substrate is built up over a given period of time or a givennumber of exposures during which the pattern on pattern generator 104and/or the relative position of the substrate changes.

G. Exemplary Modes of Operation

The depicted apparatus 100 can be used in four preferred modes:

1. Step mode: the entire pattern on pattern generator 104 is projectedin one go (i.e., a single “flash”) onto a target portion 120. Objecttable 106 is then moved in the x and/or y directions to a differentposition for a different target portion 120 to be irradiated bypatterned beam 110.

2. Scan mode: essentially the same as step mode, except that a giventarget portion 120 is not exposed in a single “flash.” Instead, patterngenerator 104 is movable in a given direction (the so-called “scandirection”, e.g., the y direction) with a speed v, so that patternedbeam 110 is caused to scan over the array of individually controllableelements 104. Concurrently, object table 106 is simultaneously moved inthe same or opposite direction at a speed V=Mv, in that M is themagnification of projection system 108. In this manner, a relativelylarge target portion 120 can be exposed, without having to compromise onresolution.

3. Pulse mode: pattern generator 104 is kept essentially stationary andthe entire pattern is projected onto a target portion 120 of substrate114 using pulsed radiation system 102. Object table 106 is moved with anessentially constant speed such that patterned beam 110 is caused toscan a line across substrate 114. The pattern on pattern generator 104is updated as required between pulses of radiation system 102 and thepulses are timed such that successive target portions 120 are exposed atthe required locations on substrate 114. Consequently, patterned beam110 can scan across substrate 114 to expose the complete pattern for astrip of substrate 114. The process is repeated until substrate 114 hasbeen exposed line by line.

4. Continuous scan mode: essentially the same as pulse mode except thata substantially constant radiation system 102 is used and the pattern onpattern generator 104 is updated as patterned beam 110 scans acrosssubstrate 114 and exposes it.

Regardless of the operation mode used, the pattern generated by the SLMor MSA of pattern generator 104 (i.e., the “on” or “off” state of eachof the individually controllable elements—hereinafter referred to as“SLM pixels”) are periodically updated to transfer the desired image tothe substrate. For example, in step mode and scan mode, the pattern canbe updated between each step or scan operation. In pulse mode, the SLMpattern is updated as required between pulses of the radiation system.In continuous scan mode, the SLM pattern is updated as the beam scansacross the substrate.

Combinations and/or variations on the above described modes of use orentirely different modes of use can also be employed.

IV. Exemplary Method

FIG. 4 illustrates a flowchart 400 that depicts an exemplary method forusing a lithography systems, in accordance with an embodiment of thepresent invention. Flowchart 400 begins at step 410 in which a maximumvalue for at least one operational parameter of the maskless lithographysystem is determined. For example, the maximum value can be determinedby control module 150.

In one example, the maximum value for the at least one operationalparameter can be determined in the following manner. An image data set(e.g., union of polygons) is received and converted into a pattern dataset (e.g., graytones). The pattern data set is compressed. Variouscompression techniques are known to persons skilled in the relevant art.Examples can include, but are not limited to, a Lempel and Ziv (LZ)adaptive dictionary-based algorithm, variations thereof, or some othercompression algorithm.

During the compression, the one or more maximum operational parameterscan be calculated. For example, the calculation of the one or moremaximum operational parameters can be based on the time that is requiredto decompress the compressed pattern data set. The compression andcalculation can be performed, for example, by compressor 220. In anexample, the one or more maximum operational parameters can beassociated with the pattern data as meta-information.

In another example, the maximum value for the at least one operationalparameter can be determined before an exposure operation. In thisexample, an image data set can be analyzed; and the at least one maximumoperational parameter can be determined from this analysis. The analysiscan be performed, for example, by analyzer 310.

In a still further example, the at least one maximum operationalparameter is used to perform a test exposure operation. Then the atleast one maximum operational parameter can be adjusted based on thetext exposure operation.

Referring back to FIG. 4, in step 420, the respective maximum values ofthe at least one operational parameter determined in step 410 are usedto set the at least one operational parameter of the masklesslithography system. In the examples of FIGS. 2 and 3, compressor 220 andanalyzer 310, respectively, can be used to set the respective maximumoperational parameters; e.g., compressor 220 or analyzer 310 can be usedto set the frequency of illumination source 102, the scan speed ofpattern generator 104, and/or the stage speed of stage 106.

In step 430, a beam of radiation is patterned using a pattern generatorof the maskless lithography system. For example, the beam of radiationcan be patterned by pattern generator 104.

In step 440, the patterned beam of radiation is projected onto a targetportion of a substrate supported by a stage during the exposureoperation. For example, projection system 108 can project beam 110 ontosubstrate 114.

V. Example Advantage

Embodiments of the present invention prevent processing overruns(errors) for masks with sections where the spatial density exceeds thedata path capacity without the need for real-time scan speed variations.

VI. Conclusion

While various embodiments of the present invention have been describedabove, it should be understood that they have been presented by way ofexample only, and not limitation. It will be apparent to persons skilledin the relevant art that various changes in form and detail can be madetherein without departing from the spirit and scope of the invention.Thus, the breadth and scope of the present invention should not belimited by any of the above-described exemplary embodiments, but shouldbe defined only in accordance with the following claims and theirequivalents.

It is to be appreciated that the Detailed Description section, and notthe Summary and Abstract sections, is intended to be used to interpretthe claims. The Summary and Abstract sections may set forth one or morebut not all exemplary embodiments of the present invention ascontemplated by the inventor(s), and thus, are not intended to limit thepresent invention and the appended claims in any way.

1. A method for determining operational parameters of a masklesslithography system, comprising: reducing an amount of data in a datapathof the maskless lithography system; and determining a maximum value ofat least one operational parameter of the maskless lithography systemresponsive to the reduced amount of data in the datapath.
 2. The methodof claim 1, wherein the determining comprises: determining a maximumfrequency of an illumination source included in the maskless lithographysystem responsive to the reduced amount of data in the datapath.
 3. Themethod of claim 1, wherein the determining comprises: determining amaximum scan speed of a pattern generator included in the masklesslithography system responsive to the reduced amount of data in thedatapath.
 4. The method of claim 1, wherein the determining comprises:determining a maximum stage speed of a stage included in the masklesslithography system responsive to the reduced amount of data in thedatapath.
 5. The method of claim 1, wherein the determining comprises:determining a maximum frequency of an illumination source, a maximumscan speed of a pattern generator, and a maximum stage speed of a stageincluded in the maskless lithography system responsive to the reducedamount of data in the datapath.
 6. A system for determining operationalparameters of a maskless lithography tool, comprising: a converter thatconverts an image data set to a pattern data set; and a compressor thatcompresses the pattern data set and calculates a maximum value of atleast one operational parameter of the maskless lithography toolresponsive to the compressed pattern data set.
 7. The system of claim 6,wherein the maximum value of the at least one operational parameter ofthe maskless lithography tool comprises a maximum frequency of anillumination source.
 8. The system of claim 6, wherein the maximum valueof the at least one operational parameter of the maskless lithographytool comprises a maximum scan speed of a pattern generator.
 9. Thesystem of claim 6, wherein the maximum value of the at least oneoperational parameter of the maskless lithography tool comprises amaximum stage speed of a stage.
 10. The system of claim 6, wherein themaximum value of the at least one operational parameter of the masklesslithography tool comprises a maximum frequency of an illuminationsource, a maximum scan speed of a pattern generator, and a maximum stagespeed of a stage.
 11. A method for determining operational parameters ofa maskless lithography system, comprising: analyzing data in a datapathof the maskless lithography system before an exposure operation; anddetermining a maximum value of at least one operational parameter of themaskless lithography system to be used during the exposure operationresponsive to the analyzed data.
 12. The method of claim 11, wherein themaximum value of the at least one operational parameter of the masklesslithography tool comprises a maximum frequency of an illuminationsource.
 13. The method of claim 11, wherein the maximum value of the atleast one operational parameter of the maskless lithography toolcomprises a maximum scan speed of a pattern generator.
 14. The method ofclaim 11, wherein the maximum value of the at least one operationalparameter of the maskless lithography tool comprises a maximum stagespeed of a stage.
 15. The method of claim 11, wherein the maximum valueof the at least one operational parameter of the maskless lithographytool comprises a maximum frequency of an illumination source, a maximumscan speed of a pattern generator, and a maximum stage speed of a stage.